IRFL1006PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFET Power MOSFET

PD - 95316
IRFL1006PbF
HEXFET^® Power MOSFET
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
G
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
D
V_DSS = 60V
R_DS(on) = 0.22Ω
I_D = 1.6A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 25°C
Continuous Drain Current, V_GS @ 10V**
Continuous Drain Current, V_GS @ 10V*
Continuous Drain Current, V_GS @ 10V*
Pulsed Drain Current
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy *
Peak Diode Recovery dv/dt
T_J, T_STG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.3
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
Parameter
Typ.
R_θJA
R_θJA
Junction-to-Amb. (PCB Mount, steady state)*
90
Junction-to-Amb. (PCB Mount, steady state)**
50
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Max.
120
60
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
05/26/04