IRFL024ZPBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFET Power MOSFET

PD - 95250
AUTOMOTIVE MOSFET ^IRFL024ZPbF
Features
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
Lead-Free
HEXFET^® Power MOSFET
D
V_DSS = 55V
R_DS(on) = 57.5mΩ
I_D = 5.1A
S
Description
Specifically designed for Automotive applications, this
HEXFET^® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive applica-
tions and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
Parameter
I_D @ T_A = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
I_D @ T_A = 70°C Continuous Drain Current, VGS @ 10V
I_DM
Pulsed Drain Current
P_D @T_A = 25°C Power Dissipation
P_D @T_A = 25°C Power Dissipation
Linear Derating Factor
V_GS
Gate-to-Source Voltage
E_{AS (Thermally limited)} Single Pulse Avalanche Energy
E_AS (Tested ) Single Pulse Avalanche Energy Tested Value
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJA
Junction-to-Ambient (PCB mount, steady state)
R_θJA
Junction-to-Ambient (PCB mount, steady state)
Max.
5.1
4.1
41
2.8
1.0
0.02
± 20
13
32
See Fig.12a, 12b, 15, 16
-55 to + 150
Typ.
–––
–––
Max.
45
120
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
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1
05/25/04