IRFIB8N50K Datasheet, PDF (1/8 Pages) International Rectifier – SMPS MOSFET

SMPS MOSFET
PD - 94444
IRFIB8N50K
Applications
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
V_DSS
500V
HEXFET^® Power MOSFET
R_DS(on) typ.
I_D
290mΩ
6.7A
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
c ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
V_GS
dv/dt
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
E_AS
I_AR
E_AR
d ^Parameter
Single Pulse Avalanche Energy
c Avalanche Current
c Repetitive Avalanche Energy
Thermal Resistance
Parameter
R_θJC
Junction-to-Case
R_θJA
Junction-to-Ambient
TO-220
FULL-PAK
Max.
6.7
4.2
27
45
0.36
±30
17
-55 to + 150
300 (1.6mm from case )
1.1(10)
Typ.
–––
–––
–––
Max.
290
6.7
4.5
Typ.
–––
–––
Max.
2.76
65
Units
A
W
W/°C
V
V/ns
°C
N•m (lbf•in)
Units
mJ
A
mJ
Units
°C/W
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1
4/21/04