IRFIB7N50LPbF Datasheet, PDF (1/9 Pages) International Rectifier – SMPS MOSFET, HEXFET Power MOSFET

PD - 95750
IRFIB7N50LPbF
SMPS MOSFET
HEXFET^® Power MOSFET
Applications
• Zero Voltage Switching SMPS
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
500V 320mΩ 85ns 6.8A
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
6.8
4.3
27
46
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
e Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.37
±30
24
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
x x 300 (1.6mm from case )
10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
I_S
Continuous Source Current
––– ––– 6.8
MOSFET symbol
D
(Body Diode)
A showing the
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
––– ––– 27
––– ––– 1.5
integral reverse
G
f ^{p-n junction diode.}
S
V T_J = 25°C, I_S = 6.8A, V_GS = 0V
t_rr
Reverse Recovery Time
f ^{––– 85 130 ns TJ = 25°C, IF = 6.8A}
––– 130 200
T_J = 125°C, di/dt = 100A/µs
Q_rr
Reverse Recovery Charge
–––
–––
280
570
420
860
f nC T_J = 25°C, I_S = 6.8A, V_GS = 0V
f T_J = 125°C, di/dt = 100A/µs
I_RRM
Reverse Recovery Current
––– 5.9 8.9 A T_J = 25°C
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
1
8/23/04