IRFIB5N50LPBF Datasheet, PDF (1/9 Pages) International Rectifier – SMPS MOSFET

PD - 95390
IRFIB5N50LPbF
Applications
SMPS MOSFET _{HEXFET® Power MOSFET}
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
V_DSS R_DS(on) typ. ^{Trr typ.} I_D
500V 0.67Ω
73ns 4.7A
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
TO-220 Full-Pak
immunity.
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C Continuous Drain Current, V_GS @ 10V
I_DM
™ Pulsed Drain Current
P_D @T_C = 25°C Power Dissipation
Max.
4.7
3.0
16
42
Units
A
W
V_GS
dv/dt
T_J
T_STG
Linear Derating Factor
Gate-to-Source Voltage
d Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.33
±30
13
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x 10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
I_S
Continuous Source Current
––– ––– 4.7
MOSFET symbol
D
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_RRM
Reverse Recovery Current
t_on
Forward Turn-On Time
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A showing the
––– ––– 16
integral reverse
G
––– ––– 1.5
p-n junction diode.
S
f V T_J = 25°C, I_S = 4.0A, V_GS = 0V
––– 73 110 ns T_J = 25°C, I_F = 4.0A
––– 99 150
f T_J = 125°C, di/dt = 100A/µs
f ––– 200 310 nC T_J = 25°C, I_S = 4.0A, V_GS = 0V
––– 360 540
f T_J = 125°C, di/dt = 100A/µs
––– 6.7 10 A T_J = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
06/10/04