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IRFIB5N50L Datasheet, PDF (1/9 Pages) International Rectifier – MOTOR Control Application | |||
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PD - 94522B
SMPS MOSFET IRFIB5N50L
Applications
⢠Zero Voltage Switching SMPS
⢠Telecom and Server Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
500V 0.67â¦
73ns 4.7A
Features and Benefits
⢠SuperFast body diode eliminates the need for external
diodes in ZVS applications.
⢠Lower Gate charge results in simpler drive requirements.
⢠Enhanced dv/dt capabilities offer improved ruggedness.
⢠Higher Gate voltage threshold offers improved noise
immunity.
Absolute Maximum Ratings
TO-220 Full-Pak
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM
 Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
4.7
3.0
16
42
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
d Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.33
±30
19
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x 10lb in (1.1N m)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
âââ âââ 4.7
MOSFET symbol
D
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
âââ âââ 16
âââ âââ 1.5
A showing the
integral reverse
G
p-n junction diode.
S
f V TJ = 25°C, IS = 4.0A, VGS = 0V
trr
Reverse Recovery Time
âââ 73 110 ns TJ = 25°C, IF = 4.0A
âââ 99 150
f TJ = 125°C, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
f âââ 200 310 nC TJ = 25°C, IS = 4.0A, VGS = 0V
âââ 360 540
f TJ = 125°C, di/dt = 100A/µs
IRRM
Reverse Recovery Current
âââ 6.7 10 A TJ = 25°C
ton
Forward Turn-On Time
www.irf.com
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
1
08/19/04
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