IRFI9610GPBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET POWER MOSFET

l Isolated Package
l High Voltage Isolation=2.5KVRMS …
l Sink to Lead Creepage Dist.=4.8mm
l P-Channel
l Dynamic dv/dt Rating
l Low thermal Resistance
l Lead-Free
PD - 95504
IRFI9610GPbF
HEXFET^® Power MOSFET
D
V_DSS = -200V
R_DS(on) = 3.0Ω
G
I_D = -2.0A
S
Description
Third Generation HEXFETs from International Rectifier provide the designer with the
best combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.Third Generation HEXFETs from International Rectifier provide the
designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-
industrial applications. The moulding compound used provides a high isolation capability
and a low thermal resistance between the tab and external heatsink. This isolation is
equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak
is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
R_θJC
R_θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
-2.0
-1.3
-8.0
27
0.22
± 20
100
-2.0
2.7
-11
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
4.6
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
07/06/04