IRFI9540N Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PRELIMINARY
l Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS …
l Sink to Lead Creepage Dist. = 4.8mm
l P-Channel
G
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
Absolute Maximum Ratings
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current †
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚†
Avalanche Current†
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt Ġ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_θJC
R_θJA
Junction-to-Case
Junction-to-Ambient
PD - 9.1487B
IRFI9540N
HEXFET^® Power MOSFET
D
V_DSS = -100V
R_DS(on) = 0.117Ω
I_D = -15A
S
TO-220 FULLPAK
Max.
-15
-10
-76
54
0.36
± 20
430
-11
5.4
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
2.8
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/16/98