IRFI7536GPBF Datasheet, PDF (1/9 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
G
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
IRFI7536GPbF
HEXFET^® Power MOSFET
D
V_DSS
R_DS(on) typ.
max.
S
I_{D (Silicon Limited)}
60V
2.7m:
3.4m:
86A
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
D
S
D
G
TO-220
Full-Pak
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
™ ^{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J
T_STG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_AS
I_AR
E_AR
d Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
™ Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
ij Junction-to-Case
R_θJA
Junction-to-Ambient (PCB Mount)
Max.
86
73
820
75
0.5
± 20
-55 to + 175
300 (1.6mm from case)
x x 10lbf in (1.1N m)
738
See Fig. 14, 15, 22a, 22b
Typ.
–––
–––
Max.
2.87
65
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
1
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Ocotber 16, 2013