IRFI4510GPBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
PD - 97790
IRFI4510GPbF
V_DSS
R_DS(on)
I_D
typ.
max.
HEXFET^® Power MOSFET
100V
10.7m
13.5m
35A
D
D
G
G
Gate
S
D
G
S
TO-220AB Full-Pak
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_{AS (Thermally limited)}
T_J
T_STG
Gate-to-Source Voltage
d Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R_JC
R_JA
f Junction-to-Case
f Junction-to-Ambient
Max.
35
24
180
42
0.28
±20
206
-55 to + 175
300
x x 10lb in (1.1N m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
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1
05/15/12