IRFI4227PBF Datasheet, PDF (1/8 Pages) International Rectifier – PDP SWITCH

PD - 97036A
PDP SWITCH
IRFI4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low E_PULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low Q_G for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l150°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
V_DS max
200
V
V_{DS (Avalanche)} typ.
R_DS(ON) typ. @ 10V
240
V
21
m:
I_RP max @ T_C= 100°C
47
A
T_J max
150
°C
D
D
G
S
D
G
S
TO-220AB Full-Pak
G
D
S
Gate
Drain
Source
Description
This HEXFET^® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E_PULSE rating. Additional features of this MOSFET are 150°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
V_GS
Gate-to-Source Voltage
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 100°C
Continuous Drain Current, V_GS @ 10V
I_DM
Pulsed Drain Current c
I_RP @ T_C = 100°C
Repetitive Peak Current g
P_D @T_C = 25°C
Power Dissipation
P_D @T_C = 100°C
Power Dissipation
Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
R_θJC
Junction-to-Case f
R_θJA
Junction-to-Ambient f
Notes  through … are on page 8
www.irf.com
Max.
±30
26
17
100
47
46
18
0.37
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
–––
Max.
2.73
65
Units
V
A
W
W/°C
°C
N
Units
1
10/12/05