IRFI4110GPBF Datasheet, PDF (1/8 Pages) International Rectifier – High Efficiency Synchronous Rectification in SMPS

PD - 96347
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
IRFI4110GPbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) typ.
max.
I_{D (Silicon Limited)}
100V
3.7mΩ
4.5mΩ
72A
D
D
G
G
Gate
S
D
G
S
TO-220AB Full-Pak
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C _{Continuous Drain Current, VGS @ 10V (Silicon Limited)}
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
c Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dv/dt
Gate-to-Source Voltage
e Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
d Single Pulse Avalanche Energy
I_AR
E_AR
Avalanche Current
f Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
R_θJA
Parameter
j Junction-to-Case
i Junction-to-Ambient
Max.
72
51
290
61
0.41
± 20
27
-55 to + 175
300
x x 10lb in (1.1N m)
71
43
6.1
Typ.
–––
–––
Max.
2.46
65
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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01/11/11