IRFI4020H-117P_15 Datasheet, PDF (1/7 Pages) International Rectifier – Integrated half-bridge package

DIGITAL AUDIO MOSFET
PD - 97252
IRFI4020H-117P
Features
Ÿ Integrated half-bridge package
Ÿ Reduces the part count by half
Ÿ Facilitates better PCB layout
Ÿ Key parameters optimized for Class-D
audio amplifier applications
Ÿ Low R_DS(ON) for improved efficiency
Ÿ Low Qg and Qsw for better THD and
improved efficiency
Ÿ Low Qrr for better THD and lower EMI
Ÿ Can delivery up to 300W per channel into
8Ω load in half-bridge configuration
amplifier
Ÿ Lead-free package
g Key Parameters
V_DS
R_DS(ON) typ. @ 10V
200
V
80
m:
Q_g typ.
19
nC
Q_sw typ.
6.8
nC
R_G(int) typ.
3.0
Ω
T_J max
150
°C
D1
G1
S1/D2
G2
S2
TO-220 Full-Pak 5 PIN
G1, G2
Gate
D1, D2
Drain
S1, S2
Source
Description
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery,
and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors
such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and
reliable device for Class D audio amplifier applications.
g Absolute Maximum Ratings
Parameter
Max.
Units
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
200
V
±20
9.1
A
5.7
36
21
W
8.5
E_AS
T_J
T_STG
d ^{Linear Derating Factor}
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
0.17
130
-55 to + 150
W/°C
mJ
°C
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
g Thermal Resistance
300
x x 10lb in (1.1N m)
R_θJC
f ^Parameter
Junction-to-Case
R_θJA
Junction-to-Ambient (free air)
Typ.
–––
–––
Max.
5.9
65
Units
°C/W
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1
08/22/06