IRFI4019HG-117P Datasheet, PDF (1/7 Pages) International Rectifier – Integrated Half-Bridge Package

PD - 96274
IRFI4019HG-117P
DIGITAL AUDIO MOSFET
Features
h Key Parameters
Ÿ Integrated Half-Bridge Package
Ÿ Reduces the Part Count by Half
Ÿ Facilitates Better PCB Layout
Ÿ Key Parameters Optimized for Class-D
Audio Amplifier Applications
Ÿ Low R_DS(ON) for Improved Efficiency
Ÿ Low Qg and Qsw for Better THD and
V_DS
R_DS(ON) typ. @ 10V
Q_g typ.
Q_sw typ.
R_G(int) typ.
T_J max
150
V
80
m:
13
nC
4.1
nC
2.5
Ω
150
°C
Improved Efficiency
Ÿ Low Qrr for Better THD and Lower EMI
Ÿ Can Delivery up to 200W per Channel into
8Ω Load in Half-Bridge Configuration
Amplifier
Ÿ Lead-Free Package
D1
G1
S1/D2
G2
S2
Ÿ Halogen-Free
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and
internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such
as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable
h ^{device for Class D audio amplifier applications.}
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
E_AS
P_D @T_C = 25°C
P_D @T_C = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
d Single Pulse Avalanche Energy
f Power Dissipation
f Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
h Thermal Resistance
Max.
150
±20
8.7
6.2
34
77
18
7.2
0.15
-55 to + 150
300
x x 10lb in (1.1N m)
Units
V
A
mJ
W
W/°C
°C
Parameter
R_θJC
R_θJA
f Junction-to-Case
f Junction-to-Ambient
Notes  through † are on page 2
www.irf.com
Typ.
–––
–––
Max.
6.9
65
Units
1
10/08/09