IRFI260_15 Datasheet, PDF (1/4 Pages) International Rectifier – Simple Drive Requirements

Provisional Data Sheet No. PD 9.809
HEXFET^® TRANSISTOR
IRFI260
N-CHANNEL
200Volt, 0.060Ω, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry design achieves ver y
low on-state resistance combined with high trans-
conductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits and virtually
any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number
IRFI260
BVDSS
200V
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
RDS(on)
0.060Ω
ID
45A*
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current 
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
IRFI260
45*
29
180
300
2.4
Units
A
W
W/K …
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ‚
700
Avalanche Current 
45
Repetitive Avalanche Energy 
30
Peak Diode Recovery dv/dt ƒ
4.3
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
V
mJ
A
mJ
V/ns
o_C
Weight
10.9 (typical)
g
* ID current limited by pin diameter