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IRFHS9351PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques9
VDS
VGS max
RDS(on) max
(@VGS = -10V)
ID
(@TC = 25°C)
-30
V
±20
V
170 mΩ
d -3.4
A
IRFHS9351PbF
HEXFET® Power MOSFET
T OP VIEW
S1 1
G1 2
D1
FET1
6 D1
5 G2
D1
G2
S2
D1
D2
D2 3
D2
FET2
4 S2
S1
G1
D2
2mm x 2mm Dual PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low RDSon (≤ 170mΩ)
Low Thermal Resistance to PCB (≤ 19°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9351TRPBF
IRFHS9351TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Tape and Reel
Tape and Reel
Quantity
4000
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @ TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
c Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 2
Max.
-30
± 20
-2.3
-1.5
d -5.1
d -4.1
d -3.4
-20
1.4
0.9
0.01
-55 to + 150
1
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Units
V
A
W
W/°C
°C
May 21, 2014