IRFHS9301PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

V_DS
V_{GS max}
R_{DS(on) max}
(@V_GS = -10V)
Q_{g (typical)}
I_D
(@T_C = 25°C)
-30
V
±20
V
37 mΩ
13
nC
d -8.5
A
PD - 97581A
IRFHS9301PbF
HEXFET^® Power MOSFET
TOP VIEW
D1
D2
G3
6D
D 5D
S
4S
D
D
D
G
D
D
S
S
2mm x 2mm PQFN
Applications
l Charge and Discharge Switch for Battery Application
l System/load switch
Features and Benefits
Features
Low R_DSon (≤ 37mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHS9301TRPBF
IRFHS9301TR2PBF
Package Type
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @ T_A = 70°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
c ^{Continuous Drain Current, VGS @ 10V (Package Limited)}
Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-6.0
-4.8
-13d
-10d
d -8.5
-52
2.1
1.3
0.02
-55 to + 150
Notes  through … are on page 2
www.irf.com
Note
Units
V
A
W
W/°C
°C
1
11/12/10