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IRFHM8363PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques
IRFHM8363PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
30
V
± 20 V
14.9
mΩ
20.4
6.7 nC
i 10
A
HEXFET® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Applications
• Power Stage for high frequency buck converters
• Battery Protection charge and discharge switches
Features and Benefits
Features
Low Thermal Resistance to PCB (< 6.7°C/W)
Low Profile (<1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFHM8363TRPBF PQFN Dual 3.3mm x 3.3mm
IRFHM8363TR2PBF PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
g Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
11
8.6
29hi
18hi
10i
116
2.7
19
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 9
1
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February 6, 2014