IRFHM8337PBF Datasheet, PDF (1/9 Pages) International Rectifier – Charge or discharge switch for battery protection

V_DSS
R_DS(on) max
(@ V_GS = 10V)
(@ V_GS = 4.5V)
Qg _(typical)
I_D
(@T_C = 25°C)
30
12.4
17.9
5.4
18
V
m
nC
A
Applications
System/load switch,
Charge or discharge switch for battery protection
Features
Low Thermal Resistance to PCB (< 5.0°C/W)
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1,Consumer Qualification
Top View
D5
D6
D7
D8
4G
3S
2S
1S
IRFHM8337TRPbF
HEXFET^® Power MOSFET
PQFN 3.3 x 3.3 mm
Benefits
Enable better Thermal Dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8337PbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8337TRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_A= 70°C
I_DM
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
(Source Bonding Technology Limited)
Power Dissipation 
Power Dissipation 
Linear Derating Factor 
Operating Junction and
Storage Temperature Range
Notes  through  are on page 8
1 www.irf.com © 2013 International Rectifier
Max.
± 20
12
9.4
94
35
22
18
2.8
25
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
August 21, 2013