IRFHM8334PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

V_DS
V_{GS max}
R_{DS(on) max}
(@V_GS = 10V)
(@V_GS = 4.5V)
Q_{g typ.}
I_D
(@T_c(Bottom) = 25°C)
30
V
± 20 ^V
9.0 _m:
13.5
7.1 nC
h 25
A
Applications
• Control MOSFET for high frequency buck converters
Features
Low Thermal Resistance to PCB (< 4.5°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
IRFHM8334TRPbF
HEXFET^® Power MOSFET
PQFN 3.3 X 3.3 mm
Benefits
Enable better thermal dissipation
Increased Power Density
results in Multi-Vendor Compatibility
⇒ Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFHM8334PBF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8334TRPBF
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_A = 25°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
(Source Bonding Technology Limited)
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Pulsed Drain Current
f Power Dissipation
Power Dissipation
T_J
T_STG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
13
43gh
27gh
25h
176
2.7
28
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1
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June 5, 2014