IRFHM830DPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
30
V
4.3 mΩ
13
nC
1.1
Ω
h 40
A
Applications
• Synchronous MOSFET for Buck Converters
Features and Benefits
Features
Low R_DSon (≤ 4.3mΩ)
Schottky intrinsic diode with low forward voltage
Low Thermal Resistance to PCB (<3.4°C/W)
100% Rg tested
Low Profile (< 1.0mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFHM830DPbF
HEXFET^® Power MOSFET
3.3mm x 3.3mm PQFN
results in
⇒
Benefits
Lower Conduction Losses
Lower switching losses
Increased Power Density
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM830DTRPbF
IRFHM830DTR2PBF
Package Type
PQFN 3.3mm x 3.3mm
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
Max.
30
±20
20
16
40h
40h
160
2.8
37
0.022
-55 to + 150
1
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Units
V
A
W
W/°C
°C
June 6, 2014