IRFHM8235PBF Datasheet, PDF (1/9 Pages) International Rectifier – Control MOSFET for synchronous buck converter

V_DSS
V_GS max
R_DS(on) max
(@ V_GS = 10V)
(@ V_GS = 4.5V)
Qg _(typical)
I_D
(@T_{C (Bottom)} = 25°C)
25
±20
7.7
13.4
7.7
25
V
V
m
nC
A
Applications
Control MOSFET for synchronous buck converter
IRFHM8235PbF
Top View
HEXFET^® Power MOSFET
D5
D6
4G
3S
S ^SG
S
D7
D8
2S
1S
D
D
D
D
D
PQFN 3.3X3.3 mm
Features
Low Thermal Resistance to PCB (<4.1°C/W)
Low Profile (<1.05mm)
Industry-Standard Pin out
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Consumer Qualification
Benefits
Enable better Thermal Dissipation
Increased Power Density
results in Multi-Vendor Compatibility
 Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM8235PbF
Package Type
PQFN 3.3 mm x 3.3 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM8235TRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current 
Power Dissipation 
Power Dissipation 
Linear Derating Factor 
Operating Junction and
Storage Temperature Range
Notes  through  are on page 8
1 www.irf.com © 2013 International Rectifier
Max.
± 20
16
13
50
32
25
240
3.0
30
0.024
-55 to + 150
Units
V
A
W
W/°C
°C
August 21, 2013