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IRFHM792TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – DC-DC Primary Switchl 48V Battery Monitoring
PD - 96368A
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
Qg typ
ID
(@Tc(Bottom) = 25°C)
100
V
± 20 V
195 mΩ
4.2 nC
h 3.4
A
IRFHM792TRPbF
IRFHM792TR2PbF
TOP VIEW
D DD D
8 765
1 234
S GS G
HEXFET® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Applications
• DC-DC Primary Switch
• 48V Battery Monitoring
Features and Benefits
Features
Low RDSon (<195mΩ)
Low Thermal Resistance to PCB (< 12°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM792TRPBF
IRFHM792TR2PBF
Package Type
PQFN Dual 3.3mm x 3.3mm
PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V (Wirebond Limited)
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
www.irf.com
Max.
100
± 20
2.3
1.8
4.8 h
3.1
3.4h
14
2.3
10.4
0.018
-55 to + 150
Units
V
A
W
W/°C
°C
1
05/10/11