IRFHM792PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Compatible with Existing Surface Mount Techniques

V_DS
V_{gs max}
R_{DS(on) max}
(@V_GS = 10V)
Q_{g typ}
I_D
(@T_c(Bottom) = 25°C)
100
V
± 20 ^V
195 mΩ
4.2 nC
h 3.4
A
TOP VIEW
D DD D
8 765
1 234
S GS G
IRFHM792PbF
HEXFET^® Power MOSFET
SG
G
S
D
D
D
D
D
D
PQFN Dual 3.3X3.3 mm
Applications
• DC-DC Primary Switch
• 48V Battery Monitoring
Features and Benefits
Features
Low RDSon (<195mΩ)
Low Thermal Resistance to PCB (< 12°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFHM792TRPBF
IRFHM792TR2PBF
Package Type
PQFN Dual 3.3mm x 3.3mm
PQFN Dual 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V (Wirebond Limited)}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
100
± 20
2.3
1.8
4.8 h
3.1
3.4h
14
2.3
10.4
0.018
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1
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December 16, 2013