IRFHM4226PBF Datasheet, PDF (1/8 Pages) International Rectifier – Control or Synchronous MOSFET for high frequency buck converters

V_DSS
R_DS(on) max
(@ V_GS = 10V)
(@ V_GS = 4.5V)
Qg _(typical)
I_D
(@T_{C (Bottom)} = 25°C)
25
2.2
3.3
16
40
V
m
nC
A
Top View
D5
D6
D7
D8
4G
3S
2S
1S
Applications
Control or Synchronous MOSFET for high frequency buck converters
FastIRFET™
IRFHM4226TRPbF
HEXFET^® Power MOSFET
PQFN 3.3 x 3.3 mm
Features
Low R_DSon (<2.2m)
Low Charge (typical 16nC)
Low Thermal Resistance to PCB (<3.2°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Low Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFHM4226TRPbF
Package Type
PQFN 3.3mm x 3.3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFHM4226TRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current 
Power Dissipation 
Power Dissipation 
Linear Derating Factor 
Operating Junction and
Storage Temperature Range
Max.
± 20
28
105
67
40
420
2.7
39
0.021
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through  are on page 8
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December 5, 2013