IRFHE4250DPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Low thermal resistance path to the PCB

V_DSS
R_DS(on) max
(@V_GS = 4.5V)
Qg _(typical)
I_D
(@T_C = 25°C)
Q1
25
4.10
13
60
Q2
25
1.35
35
60
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FASTIRFET™
IRFHE4250DPbF
HEXFET^® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low thermal resistance path to the PCB
Low thermal resistance path to the top
Low charge control MOSFET (13nC typical)
Low R_DSON synchronous MOSFET (<1.35m)
Intrinsic schottky diode with low forward voltage on Q2
RoHS compliant, halogen-free
MSL2, industrial qualification
DUAL PQFN 6X6 mm
Benefits
Increased power density
Increased power density
Increased power density
results in Lower switching losses
 Lower conduction losses
Lower switching losses
Environmentally friendlier
Increased reliability
Base part number
IRFHE4250DPbF
Package Type
Dual PQFN 6mm x 6mm
Standard Pack
Form
Tape and Reel
Quantity
4000
Orderable Part Number
IRFHE4250DTRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Thermal Resistance
R_JC (Bottom)
R_JC (Top)
R_JA
R_JA (<10s)
Parameter
Junction-to-Case 
Junction-to-Case 
Junction-to-Ambient 
Junction-to-Ambient 
Notes  through  are on page 12
Q1 Max. Q2 Max.
± 16
86 303
69 243
60
180
156
100
1.3
60
525
156
100
1.3
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
3.7
0.91
24
17
Q2 Max.
0.91
2.1
24
17
Units
°C/W
1 www.irf.com © 2013 International Rectifier
September 26, 2013