IRFH9310PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – RoHS Compliant Containing no Lead, no Bromide and no Halogen

V_DS
-30
V
R_{DS(on) max}
4.6 mΩ
6 mm
(@V_GS = 10V)
Q_{g (typical)}
110 _nC
R_{G (typical)}
2.8
Ω
I_D
(@T_A = 25°C)
-21
A
Applications
• Charge and Discharge Switch for Notebook PC Battery Application
IRFH9310PbF
HEXFET^® Power MOSFET
S
D
S
D
S
G
D
D
PQFN
5mm x 6mm
Features and Benefits
Features
Low R_DSon (≤ 4.6mΩ)
Industry-Standard PQFN Package
RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses
results in
⇒ ^{Multi-Vendor Compatibility}
Environmentally Friendlier
Orderable part number
IRFH9310TRPBF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @ T_A = 70°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V (Silicon Limited)
Continuous Drain Current, V_GS @ -10V (Silicon Limited)
Continuous Drain Current, V_GS @ -10V (Package Limited)
c Pulsed Drain Current
f Power Dissipation
f Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
-30
± 20
-21
-17
-107
- 86
-40
-170
3.1
2.0
0.025
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 2
1
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August 26, 2014