IRFH8337PBF Datasheet, PDF (1/9 Pages) International Rectifier – Control MOSFET for high frequency buck converters

V_DS
V_{GS max}
R_{DS(on) max}
(@V_GS = 10V)
(@V_GS = 4.5V)
Q_{g typ.}
I_D
(@T_c(Bottom) = 25°C)
30
V
± 20 ^V
12.8
mΩ
19.9
4.7 nC
i 16.2
A
Applications
• Control MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 4.7°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8337PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type
IRFH8337TRPBF
IRFH8337TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Q u a nt it y
Tape and Reel
4000
Tape and Reel
400
Note
EO L notice #259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Continuous Drain Current, V_GS @ 10V (Source Bonding
c ^{Technology Limited)}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
12
9.7
35hi
22hi
i 16.2
65
3.2
27
0.026
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through ‡ are on page 9
1
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January 17, 2014