IRFH8325PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET

V_DS
V_{gs max}
R_{DS(on) max}
(@V_GS = 10V)
(@V_GS = 4.5V)
Q_{g typ}
I_D
(@T_c(Bottom) = 25°C)
30
V
± 20 ^V
5.0
mΩ
7.2
15
nC
i 25
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
IRFH8325PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Benefits
Enable better thermal dissipation
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8325TRPbF
IRFH8325TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Continuous Drain Current, V_GS @ 10V (Source Bonding
Technology Limited)
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
30
± 20
21
17
82hi
52hi
25i
100
3.6
54
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
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December 16, 2013