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| IRFH8321PBF Datasheet, PDF (1/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
V
± 20 V
4.9
mï
6.8
19.4 nC
i 25
A
Applications
ï·ï ï Synchronous MOSFET for high frequency buck converters
IRFH8321PbF
HEXFET® Power MOSFET
PQFN 5X6 mm
Features
Low Thermal Resistance to PCB (< 2.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
results in
ï
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type
IRFH8321TRPBF
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Note
Absolute Max imum Ratings
Pa ram ete r
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
ID M
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Source Bonding
Technology Limited)
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
± 20
21
17
83hi
52hi
25i
332
3.4
54
0.027
-55 to + 150
Units
V
A
W
W /°C
°C
Notes  through  are on page 9
1
www.irf.com © 2012 International Rectifier
August 3, 2012
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