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IRFH8311PBF Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for high frequency buck converters
IRFH8311PbF
VDS
Vgs max
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
Qg typ.
ID
(@Tc(Bottom) = 25°C)
30
V
± 20 V
2.1
mΩ
3.2
30
nC
i 80
A
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (<1.2mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
results in
⇒
Benefits
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number Package Type
Standard Pack
Form Quantity
Orderable part number
Note
IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8311TRPBF
IRFH8311TR2PBF PQFN 5mm x 6mm Tape and Reel 400
IRFH8311TR2PBF EOL notice #259
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through ‡ are on page 9
Max.
30
± 20
32
26
169hi
107hi
80i
400
3.6
96
0.029
-55 to + 150
1
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Units
V
A
W
W/°C
°C
January 7, 2014