IRFH8202PBF Datasheet, PDF (1/8 Pages) International Rectifier – OR-ing MOSFET for 12V (typical) Bus in-Rush Current

V_DS
25 V
R_{DS(on) max}
(@V_GS = 10V)
1.05 mΩ
Q_{g (typical)}
52 nC
R_{G (typical)}
1.3 Ω
I_D
h 100
A
(@T_C(Bottom) = 25°C)
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.05 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
StrongIRFET™
IRFH8202PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
results in
⇒
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH8202PbF
Package Type
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable part number
IRFH8202TRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
47
30
h 100
h 100
400
3.6
160
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 8
1 www.irf.com © 2013 International Rectifier
August 02, 2013