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IRFH7936TRPBF Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for Notebook Processor Power
IRFH7936PbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg
4.8mΩ@VGS = 10V 17nC
Benefits
l Very low RDS(ON) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for RG
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJC
RθJA
fParameter
Junction-to-Case
g Junction-to-Ambient
PQFN 5X6 mm
Max.
30
± 20
20
16
54
160
3.1
2.0
0.025
-55 to + 150
Typ.
–––
–––
Max.
5.6
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 9
1
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August 16, 2013