IRFH7928PBF Datasheet, PDF (1/10 Pages) International Rectifier – HEXFETPower MOSFET

Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
PD -96209
Preliminary
IRFH7928PbF
HEXFET^® Power MOSFET
V_DSS
R_DS(on) max
Qg
: 30V 2.9m @V_GS = 10V 40nC
Benefits
l Very low R_DS(ON) at 4.5V V_GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for R_G
l Lead-Free (Qualified up to 260°C Reflow)
l RoHS compliant (Halogen Free)
l Low Thermal Resistance
l Large Source Lead for more reliable Soldering
S
D
S
D
S
G
D
D
PQFN
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
T_J
T_STG
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
26
21
124
208
3.1
2.0
0.025
-55 to + 150
Thermal Resistance
R_θJC
R_θJA
f^Parameter
Junction-to-Case
g Junction-to-Ambient
Typ.
–––
–––
Max.
1.8
40
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through … are on page 10
www.irf.com
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/19/08