IRFH7911PBF_15 Datasheet, PDF (1/11 Pages) International Rectifier – Control and synchronous FET in one package

IRFH7911PbF
HEXFET^® Power MOSFET
Q1
V_DS
30
R_{DS(on) max}
8.6
(@V_GS = 10V)
Q_{g (typical)}
8.3
I_D
13
(@T_A = 25°C)
Q2
30
V
3.0 m:
34
nC
28
A
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Dual PQFN 5X6 mm
Applications
• Control and synchronous MOSFET for buck converters
Features and Benefits
Features
Control and synchronous FET in one package
Low charge control MOSFET (8.3 nC typical)
Low R_DSon synchronous MOSFET (< 3.0 mΩ)
100% Rg tested
Low Profile (≤ 0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL2, Consumer Qualification
Benefits
Increased power density
(50% vs two PQFN 5x6)
Lower switching losses
results in ^{Lower conduction losses}
⇒ Increased reliability
Increased power density
Easier manufacturing
Environmentally Friendlier
Increased reliability
Orderable part number
IRFH7911TRPbF
IRFH7911TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
Gate-to-Source Voltage
I_D @ T_A = 25°C
Continuous Drain Current, V_GS @ 10V
I_D @ T_A = 70°C
I_DM
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
P_D @T_A = 25°C
Power Dissipation
P_D @T_A = 70°C
Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Thermal Resistance
Parameter
R_θJC
R_θJA
f Junction-to-Case
g Junction-to-Ambient
Q1 Max.
Q2 Max.
30
± 20
13
28
10
23
100
230
2.4
3.4
1.5
2.2
0.019
0.027
-55 to + 150
Units
V
A
W
W/°C
°C
Q1 Max.
7.7
53
Q2 Max.
2.5
37
Units
°C/W
1
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May 9, 2014