IRFH7190PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Optimized for Secondary Side Synchronous Rectification

FastIRFET™
IRFH7190PbF
V_DSS
R_DS(on) max
(@ V_GS = 10V)
Q_{g (typical)}
R_{g (typical)}
I_D
(@T_{C (Bottom)} = 25°C)
100
7.5
26
1.0
82
V
m
nC

A
HEXFET^® Power MOSFET
PQFN 5X6 mm
Applications
 Optimized for Secondary Side Synchronous Rectification
 Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
 Hot Swap and Active O-Ring
 BLDC Motor Drive
Features
Low R_DS(ON) (< 7.5m)
Internal Snubber
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg Tested
Low Profile (<1.05 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1
Benefits
Lower Conduction Losses
Reduced Vds Spike, Improved EMI
Increased Power Density
Increased Reliability
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH7190PbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH7190TRPbF
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_A = 25°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
± 20
15
82
52
245
3.6
104
0.03
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through  are on page 9
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January 13, 2015