IRFH6200PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFETPower MOSFET

V_DS
R_{DS(on) max}
(@V_GS = 4.5V)
R_{DS(on) max}
(@V_GS = 2.5V)
20
V
1.20
mΩ
1.50
mΩ
PD - 97493A
IRFH6200PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Applications
• Charge and discharge switch for battery application
• Load switch for 12V (typical) bus
Features and Benefits
Features
Low R_DSon (≤ 1.20mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
results in
⇒
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Orderable part number
IRFH6200TRPBF
IRFH6200TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
c ^{Continuous Drain Current, VGS @ 4.5V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
20
±12
45
36
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
09/7/2010