IRFH5306PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Control MOSFET for buck converters

V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
30
V
8.1 mΩ
7.8
nC
1.4
Ω
44
A
Applications
• Control MOSFET for buck converters
IRFH5306PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Fe a ture s
Low charge (typical 7.8nC)
Low thermal resistance to PCB (< 4.9°C/W)
100% Rg tested
Low profile (< 0.9 mm)
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Industrial qualification
results in
⇒
Be ne fi ts
Lower switching losses
Increased power density
Increased reliability
Increased power density
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Orderable part number
Package Type
IRFH5306TRPBF
IRFH5306TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Notes  through … are on page 9
Max.
30
±20
15
13
44
28
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
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March 17, 2015