IRFH5302PBF Datasheet, PDF (1/8 Pages) International Rectifier – HEXFET Power MOSFET

PD -97156
IRFH5302PbF
HEXFET^® Power MOSFET
V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
30
V
2.1 mΩ
29
nC
1.6
Ω
h 100
A
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for buck converters
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Benefits
Low R_DSon (≤ 2.1mΩ)
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
results in
⇒
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5302TRPBF
IRFH5302TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Notes  through † are on page 8
www.irf.com
Max.
30
± 20
32
26
100
100
h
h
400
3.6
100
0.029
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
10/20/09