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| IRFH5302DTRPBF Datasheet, PDF (1/8 Pages) International Rectifier – Synchronous MOSFET for high frequency buck converters | |||
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IRFH5302PbF
VDS
RDS(on) max
(@VGS = 10V)
VSD max
(@IS = 5.0A)
trr (typical)
ID
(@Tc(Bottom) = 25°C)
30
V
2.5 mâ¦
0.65 V
19
ns
h 100
A
Applications
⢠Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<2.5mâ¦)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
â Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type
IRFH5302DTRPBF
IRFH5302DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Qua nti ty
Tape and Reel
4000
Tape and Reel
400
Note
EOL Notice #259
Absolute Maximum Ratings
Parameter
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
h Continuous Drain Current, VGS @ 10V
h Continuous Drain Current, VGS @ 10V
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes  through  are on page 8
Max.
30
± 20
29
23
100
100
400
3.6
104
0.83
-55 to + 150
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
January 6, 2014
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