IRFH5301PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for Buck Converters

IRFH5301PbF
HEXFET^® Power MOSFET
V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
30
V
1.85 mΩ
37
nC
1.5
Ω
100h A
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for Buck Converters
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5301TRPbF
IRFH5301TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Max.
30
± 20
35
28
h 100
h 100
400
3.6
110
0.029
-55 to + 150
Notes  through † are on page 9
1
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Units
V
A
W
W/°C
°C
March 12, 2015