IRFH5255TR2PBF Datasheet, PDF (1/8 Pages) International Rectifier – Control MOSFET for high Frequency Buck Converters

V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
25
V
6.0 mΩ
7.0 nC
0.6
Ω
51
A
Applications
• Control MOSFET for high Frequency Buck Converters
IRFH5255PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Features
Low Charge (typical 7nC)
Low Rg (typical 0.6Ω)
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5255TRPbF
IRFH5255TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
T_J
Operating Junction and
T_STG
Storage Temperature Range
Max.
25
± 20
15
12
51
33
60
3.6
26
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 8
1
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December 16, 2013