IRFH5250DPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Synchronous MOSFET for high frequency buck converters

IRFH5250DPbF
V_DS
R_{DS(on) max}
(@V_GS = 10V)
V_{SD max}
(@I_S = 5.0A)
t_{rr (typical)}
I_D
(@T_mb = 25°C)
25
V
1.4 mΩ
0.6
V
27
ns
h 100
A
HEXFET^® Power MOSFET
PQFN 5X6 mm
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Low RDSon (<1.4mΩ)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number Package Type
IRFH5250DTRPBF
IRFH5250DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
Parameter
V_DS
Drain-to-Source Voltage
V_GS
I_D @ TA = 25°C
I_D @ TA = 70°C
I_D @ T_mb = 25°C
I_D @ T_mb = 100°C
I_DM
P_D @TA = 25°C
P_D @Tmb = 25°C
T_J
T_STG
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9
Max.
25
± 20
40
32
100h
100h
400
3.6
156
0.029
-55 to + 150
1
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Note
EOL notice #259
Units
V
A
W
W/°C
°C
June 23, 2015