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IRFH5220PBF Datasheet, PDF (1/8 Pages) International Rectifier – Secondary Side Synchronous Rectification
PD -97615
IRFH5220PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
200
V
99.9 mΩ
20
nC
2.3
Ω
20
A
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low RDSon
Low Thermal Resistance to PCB (≤ 1.2°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5220TRPBF
IRFH5220TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC(Top) = 25°C
ID @ TC(Top) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Top) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
g Power Dissipation
f Power Dissipation
f Linear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
200
± 20
3.8
3.0
20
13
5.8
3.7
47
3.6
8.3
0.07
-55 to + 150
Note
Units
V
A
W
W/°C
°C
1
12/21/10