IRFH5110PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Secondary Side Synchronous Rectification

V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_c(Bottom) = 25°C)
100
V
12.4 mΩ
54
nC
1.5
Ω
63
A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
Features and Benefits
Features
Low RDSon (< 12.4 mΩ)
Low Thermal Resistance to PCB (< 1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
IRFH5110PbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5110TRPbF
IRFH5110TR2PbF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
100
± 20
11
9.0
63
40
252
3.6
114
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through … are on page 9
1
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March 12, 2015