IRFH5004PBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Secondary Side Synchronous Rectification

IRFH5004PbF
HEXFET^® Power MOSFET
V_DS
R_{DS(on) max}
(@V_GS = 10V)
Q_{g (typical)}
R_{G (typical)}
I_D
(@T_mb = 25°C)
40
V
2.6 mΩ
73
nC
1.2
Ω
h 100
A
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low R_DSon (≤ 2.6mΩ)
Low Thermal Resistance to PCB (≤ 0.8°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
results in
⇒
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
Standard Pack
Form
Quantity
IRFH5004PBF PQFN 5mm x 6mm Tape and Reel 4000
PQFN 5mm x 6mm Tape and Reel 1000
Orderable part number
IRFH5004TRPBF
IRFH5004TR2PBF
Note
EOL notice #259
Absolute Maximum Ratings
Parameter
V_DS
V_GS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_D @ T_mb = 25°C
I_D @ T_mb = 100°C
I_DM
P_D @T_A = 25°C
P_D @ T_mb = 25°C
T_J
T_STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
c ^{Continuous Drain Current, VGS @ 10V}
Pulsed Drain Current
g Power Dissipation
g Power Dissipation
g Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
40
±20
28
23
100h
100h
400
3.6
156
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1
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May 19, 2015