IRFH4257DPBF_15 Datasheet, PDF (1/12 Pages) International Rectifier – Control and synchronous MOSFETs in one package

V_DSS
R_DS(on) max
(@V_GS = 4.5V)
Qg _(typical)
I_D
(@T_C = 25°C)
Q1
25
4.70
9.7
25
Q2
25
1.80
23
25
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FastIRFET™
IRFH4257DPbF
HEXFET^® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (9.7nC typical)
Low R_DSON synchronous MOSFET (<1.8m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Dual PQFN 5X4 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
 Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
IRFH4257DPbF
Package Type
Dual PQFN 5mm x 4mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4257DTRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_C = 70°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
(Source Bonding Technology Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20
68 111
54
88
25
120
25
16
0.20
25
375
28
18
0.22
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_JC (Bottom) Junction-to-Case 
R_JC (Top) Junction-to-Case 
R_JA
Junction-to-Ambient 
R_JA (<10s) Junction-to-Ambient 
Notes  through  are on page 12
Q1 Max.
5.0
33
45
30
Q2 Max.
4.5
26
40
27
Units
°C/W
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
September 15, 2014