IRFH4253DPBF_15 Datasheet, PDF (1/13 Pages) International Rectifier – Control and synchronous MOSFETs in one package

V_DSS
R_DS(on) max
(@V_GS = 4.5V)
Qg _(typical)
I_D
(@T_C = 25°C)
Q1
25
4.60
10
35
Q2
25
1.45
31
35
V
m
nC
A
Applications
Control and Synchronous MOSFETs for synchronous buck
converters
FastIRFET™
IRFH4253DPbF
HEXFET^® Power MOSFET
Features
Control and synchronous MOSFETs in one package
Low charge control MOSFET (10nC typical)
Low R_DSON synchronous MOSFET (<1.45m)
Intrinsic Schottky Diode with Low Forward Voltage on Q2
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
DUAL PQFN 5X6 mm
Benefits
Increased power density
Lower switching losses
results in Lower conduction losses
 Lower Switching Losses
Environmentally friendlier
Increased reliability
Base part number
IRFH4253DPbF
Package Type
Dual PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4253DTRPbF
Absolute Maximum Ratings
Parameter
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 70°C
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 4.5V
Continuous Drain Current, V_GS @ 4.5V
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 4.5V
(Source Bonding Technology Limited)
I_DM
P_D @T_C = 25°C
Pulsed Drain Current
Power Dissipation
P_D @T_C = 70°C
Power Dissipation
Linear Derating Factor
T_J
T_STG
Operating Junction and
Storage Temperature Range
Q1 Max. Q2 Max.
± 20
64 145
51 116
35
35
120
580
31
50
20
32
0.25
0.40
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R_JC (Bottom)
R_JC (Top)
R_JA
R_JA (<10s)
Junction-to-Case 
Junction-to-Case 
Junction-to-Ambient 
Junction-to-Ambient 
Notes  through  are on page 12
Q1 Max.
4.0
20
34
24
Q2 Max.
2.5
13
38
24
Units
°C/W
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May 21, 2014