IRFH4210DPBF_15 Datasheet, PDF (1/9 Pages) International Rectifier – Schottky Intrinsic Diode with Low Forward Voltage

V_DSS
R_DS(on) max
(@ V_GS = 10V)
(@ V_GS = 4.5V)
Qg _(typical)
I_D
(@T_{C (Bottom)} = 25°C)
25
1.10
1.35
37.0
100
V
m
nC
A
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
FastIRFET™
IRFH4210DPbF
HEXFET^® Power MOSFET
PQFN 5X6 mm
Features
Low R_DS(ON) (<1.10 m)
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<1.0°C/W)
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
results in Increased Power Density
 Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base part number
IRFH4210DPbF
Package Type
PQFN 5mm x 6 mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRFH4210DTRPbF
Absolute Maximum Ratings
V_GS
I_D @ T_A = 25°C
I_D @ T_C(Bottom) = 25°C
I_D @ T_C(Bottom) = 100°C
I_D @ T_C(Bottom) = 25°C
I_DM
P_D @T_A = 25°C
P_D @T_C(Bottom) = 25°C
T_J
T_STG
Parameter
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current 
Power Dissipation 
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
± 20
44
266
168
100
400
3.5
125
0.028
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through  are on page 9
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March 16, 2015