IRFG9110 Datasheet, PDF (1/7 Pages) International Rectifier – POWER MOSFET THRU-HOLE (MO-036AB)

PD - 90397G
POWER MOSFET
THRU-HOLE (MO-036AB)
Product Summary
Part Number RDS(on) ID
IRFG9110 1.4Ω -0.75A
IRFG9110
JANTX2N7335
JANTXV2N7335
REF:MIL-PRF-19500/599
100V, QUAD P-CHANNEL
HEXFET^® MOSFET TECHNOLOGY
HEXFET^® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Electrically Isolated
n Dynamic dv/dt Rating
n Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
-0.75
-0.5
-3.0
1.4
0.011
Units
A
W
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
±20
75
—
—
-5.5
-55 to 150
300 ( 0.063 in.(1.6mm) from case for 10s)
1.3 (typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
04/16/02